MEMORY SYSTEM AND DRIVING METHOD THEREOF

摘要

A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

主权项

1. A method of programming a nonvolatile memory device including a plurality of strings, each of the plurality of strings including a plurality of nonvolatile memory cells connected to a plurality of word-lines, the method comprising:
during a first interval, applying a first pass voltage to a selected word-line among the plurality of word-lines and a second pass voltages to an unselected word-line among the plurality of word-lines, the selected word-line being adjacent to the unselected word-line; during a second interval following the first interval, increasing the first pass voltage to a program voltage, and activating a discharge path to discharge charges of the unselected word-line in response to a discharge enable signal, the discharge enable signal being controlled in response to a program voltage applying signal indicating a time interval during which the first pass voltage increases to the program voltage; and during a third interval following the second interval, continuing to apply the program voltage to the selected word-line, and inactivating the discharge path connected to the unselected word-line by disabling the discharge enable signal, wherein the plurality of nonvolatile memory cells are connected in series and are stacked on or above a substrate in a direction that is perpendicular to the substrate.