REVERSED STACK MTJ

摘要

An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer.

主权项

1. A method of manufacturing an integrated circuit device, comprising:
providing a substrate; and forming a free magnetic tunnel junction (MTJ) layer configured to switch between at least two different magnetic orientations over the substrate; forming an insulating MTJ barrier layer arranged over the free MTJ layer; and forming a pinned MTJ layer having a fixed magnetic orientation over the insulating MTJ barrier layer; wherein the insulating MTJ barrier layer and the pinned MTJ layer have substantially aligned sidewalls which are disposed on an upper surface of the free MTJ layer.