Semiconductor device

摘要

A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.

主权项

1. A semiconductor device comprising:
a power amplifier for amplifying RF signals in a plurality of frequency bands; an output matching circuit connected to an output of said power amplifier; a first capacitor connected at a first end to an output of said output matching circuit; a plurality of output paths; a switch connected to a second end of said first capacitor and directing each of the RF signals to one of said plurality of output paths in accordance with frequency band of each of the RF signals; and a plurality of second capacitors, each second capacitor being connected in series to a respective one of said output paths, wherein
capacitance of said first capacitor is larger than capacitance of any of said second capacitors,the capacitance of said first capacitor and the capacitances of said second capacitors satisfy the following equation:
0.8√{square root over (N)}·COUT—k≦CIN≦1.2√{square root over (N)}·COUT—k where CIN is the capacitance of said first capacitor, COUT—k is the capacitance of a kth one of said second capacitors, k=1, 2, . . . , N, and N is the number of said second capacitors.