| 摘要 |
A structure includes a silicon substrate (1) having a plurality of recessed portions (2), each having a bottom (3) and a side wall (7), silicide layers (4), one each in contact with the bottoms of the recessed portions, and a metal structure (5) including metal portions, one each disposed in the recessed portions and in contact with the silicide layers. The silicide layers are electrically connected to each other through the silicon substrate. |
