发明名称 Apparatus having heat insulating cylinder with step portion for manufacturing semiconductor single crystal
摘要 The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
申请公布号 US9234296(B2) 申请公布日期 2016.01.12
申请号 US201113813551 申请日期 2011.07.06
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 Takashima Shou;Miyahara Yuuichi;Iwasaki Atsushi;Mitamura Nobuaki;Sonokawa Susumu
分类号 C30B15/14;C30B29/06;C30B15/30 主分类号 C30B15/14
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A semiconductor single crystal manufacturing apparatus at least comprising, within a growth furnace main body, a crucible, and a heater disposed around the crucible to pull upwardly a semiconductor single crystal by the Czochralski method from a raw material melt while heating the raw material melt contained within the crucible by means of the heater, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, and the heat insulating cylinder has, at an inside surface thereof, a step portion dividing the heat insulating cylinder into an upper part and a lower part, and the inner diameter of the lower part is larger than the inner diameter of the upper part; and wherein a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, the entire outer diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part of the heat insulating cylinder, and the heat insulating cylinder and the heat insulating plate are separated from each other by a gap and do not contact each other.
地址 Tokyo JP