Method of photoresist strip

摘要

A method of photoresist strip includes providing a semiconductor substrate and performing an immerse step and a strip step, wherein the semiconductor substrate comprises a base, a bonding pad, a protective layer, an under bump metallurgy layer, a patterned photoresist layer and a bump. The patterned photoresist layer covers the under bump metallurgy layer and a lateral surface of the bump, wherein a first connection interface is formed between the patterned photoresist layer and the lateral surface of the bump, and a second connection interface is formed between the patterned photoresist layer and the under bump metallurgy layer. In the immerse step, the patterned photoresist layer contacts with a chemical solution which degrades the bond strength of the first connection interface. Therefore, in the strip step, the semiconductor substrate is scoured by a flow with appropriate force of impact, which strips the patterned photoresist layer from the base.

主权项

1. A method of photoresist strip includes:
providing a semiconductor substrate having a base, a bonding pad, a protective layer, an under bump metallurgy layer, a patterned photoresist layer and a bump, wherein the bonding pad is located at a surface of the base, the protective layer covers the base and the bonding pad and comprises an opening for revealing the bonding pad, the under bump metallurgy layer covers the protective layer, the bump is disposed on the under bump metallurgy layer and comprises a lateral surface, the patterned photoresist layer covers the under bump metallurgy layer and the lateral surface of the bump, wherein a first connection interface is formed between the patterned photoresist layer and the lateral surface of the bump, a second connection interface is formed between the patterned photoresist layer and the under bump metallurgy layer, the first connection interface comprises a first bond strength and the second connection interface comprises a second bond strength; an immerse step, immersing the semiconductor substrate into a chemical solution, the chemical solution contacts with the patterned photoresist layer and infiltrates into the first connection interface to change the first bond strength of the first connection interface into a third bond strength, the second strength of the second connection interface change for a fourth bond strength, wherein the third bond strength is smaller than the first bond strength; and a strip step, scouring the semiconductor substrate by a flow, wherein the flow has a force of impact larger than the third bond strength and the fourth bond strength to strip the patterned photoresist layer from the base so as to reveal the lateral surface of the bump and the under bump metallurgy layer.