| 发明名称 |
FIN FIELD-EFFCT TRANSISTOR AND FABRICATION METHOD THEREOF |
| 摘要 |
A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins. |
| 申请公布号 |
US2015380241(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514712533 |
申请日期 |
2015.05.14 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
YU XIAOPENG;HE YOUFENG;CHEN ZHENGLING |
| 分类号 |
H01L21/02;H01L29/66;H01L29/78 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating fin-field effect transistors, comprising:
providing a substrate; forming a plurality of fins on a surface of the substrate; forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process; and performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins. |
| 地址 |
Shanghai CN |
