| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method and the like of the same, which can reduce contact resistance between a source electrode and a drain electrode.SOLUTION: A compound semiconductor device includes: a channel layer 102; a carrier supply layer 104 on the channel layer 102; a gate electrode 105g on the carrier supply layer 104; and a source electrode 105s including a first part 141s which sandwiches the channel layer 102 with the carrier supply layer 104, and a drain electrode 105d including a second part 141d which sandwiches the channel layer 102 with the carrier supply layer 104. The carrier supply layer 104 has a band gap larger than a band gap of the channel layer 102. |
