发明名称 GAP FREE ANCHORED CONDUCTOR AND DIELECTRIC STRUCTURE AND METHOD FOR FABRICATION THEREOF
摘要 A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids
申请公布号 US2009151981(A1) 申请公布日期 2009.06.18
申请号 US20080190814 申请日期 2008.08.13
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;ADVANCED MICRO DEVICES INC. ("AMD") 发明人 BOLOM TIBOR;GRUNOW STEPHAN;RATH DAVID L.;SIMON ANDREW HERBERT
分类号 H01B5/14 主分类号 H01B5/14
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