发明名称 METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL
摘要 The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
申请公布号 WO2009005825(A1) 申请公布日期 2009.01.08
申请号 WO2008US08263 申请日期 2008.07.03
申请人 MICROLINK DEVICES, INC.;PAN, NOREN;HILLIER, GLEN;VU, DUY PHACH;TATAVARTI, RAO 发明人 PAN, NOREN;HILLIER, GLEN;VU, DUY PHACH;TATAVARTI, RAO
分类号 H01L31/042;H01L31/078 主分类号 H01L31/042
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