FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE AND DRAIN REGIONS
摘要
<p>Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a field effect transistor device comprises the following steps. A substrate is provided having a silicon layer thereon. A fin lithography hardmask is patterned on the silicon layer. A dummy gate structure is placed over a central portion of the fin lithography hardmask. A filler layer is deposited around the dummy gate structure. The dummy gate structure is removed to reveal a trench in the filler layer, centered over the central portion of the fin lithography hardmask, that distinguishes a fin region of the device from source and drain regions of the device. The fin lithography hardmask in the fin region is used to etch a plurality of fins in the silicon layer. The trench is filled with a gate material to form a gate stack over the fins. The filler layer is removed to reveal the source and drain regions of the device, wherein the source and drain regions are intact and self-aligned with the gate stack.</p>
申请公布号
WO2008155208(A1)
申请公布日期
2008.12.24
申请号
WO2008EP56733
申请日期
2008.06.02
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHANG, JOSEPHINE, BEA;GUILLORN, MICHAEL;HAENSCH, WILFRIED, ERNST-AUGUST;SAENGER, KATHERINE, LYNN