发明名称 Power device package and method of fabricating the same
摘要 Provided are a power device package, which can be made compact by vertically stacking substrates on which semiconductor chips are mounted, and a method of fabricating the power device package. The power device package includes: a first substrate comprising a first surface and a second surface opposite to each other, and a first wiring pattern formed on the first surface; one or more power semiconductor chips mounted on the first surface of the first substrate and electrically connected to the first wiring pattern; a second substrate vertically spaced apart from the first substrate and comprising a second wiring pattern; one or more first control semiconductor chips mounted on the second substrate and electrically connected to the second wiring pattern; a lead frame electrically connected to the first wiring pattern and the second wiring pattern; and a sealing member sealing the first substrate, the power semiconductor chips, the second substrate, the first control semiconductor chips, and at least a part of the lead frame so as to expose the second surface of the first substrate.
申请公布号 US2009218666(A1) 申请公布日期 2009.09.03
申请号 US20080284217 申请日期 2008.09.18
申请人 YANG GWI-GYEON 发明人 YANG GWI-GYEON
分类号 H01L23/495;H01L21/60 主分类号 H01L23/495
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