| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that when a silicon mixed crystal layer is formed in a p-type source drain region, there may be a risk of a decrease in carrier mobility of an N-type MIS transistor. SOLUTION: An active region 10a and an active region 10b are isolated by an element isolation region 11, a first transistor of a first conductivity type is provided on the active region 10a, and a second transistor of a second conductivity type is provided on the active region 10b. In the active region 10b, the silicon mixed crystal layer 21 having first stress is provided. A recessed part 22 is provided on an upper surface of a part of the element isolation region 11 sandwiched between the active region 10a and active region 10b. A stress insulating film 24 is provided in the recessed part 23, and has second stress in the opposite direction from the first stress. COPYRIGHT: (C)2011,JPO&INPIT
|
