| 摘要 |
PROBLEM TO BE SOLVED: To provide a split gate non-volatile semiconductor memory device which has a stable operation while reducing an increase in chip area.SOLUTION: A step of verifying the non-volatile semiconductor memory is performed in the following procedure: (a) supplying a verify voltage which is lower than a word gate voltage for a normal read operation to a word gate; (b) supplying a control gate voltage for the normal read operation to a control gate; and (c) determining whether a current flowing depending on the verify voltage and the control gate voltage matches a reference current which flows during the normal read operation. By reducing the voltage of the word gate during an erase verify operation of a TwinMONOS cell, the erase verification operation can be performed without using a negative voltage of the control gate. |
