发明名称 WAFER PROCESSING METHOD
摘要 A wafer is divided into individual device chips along crossing division lines, the division lines being formed on the front side of the wafer to thereby define separate regions where devices are respectively formed. A division groove having a depth corresponding to the finished thickness of each device chip is formed along each division line on the front side of the wafer. The back side of the wafer is ground until the division groove along each division line is exposed to the back side of the wafer, thereby dividing the wafer into the individual device chips. An adhesive film for die bonding is mounted on the back side of the wafer and a dicing tape is attached to the adhesive film. The dicing tape is expanded to thereby break the adhesive film along the individual device chips.
申请公布号 US2015357242(A1) 申请公布日期 2015.12.10
申请号 US201514735888 申请日期 2015.06.10
申请人 DISCO CORPORATION 发明人 Nakamura Masaru
分类号 H01L21/78;H01L21/304;H01L21/02;H01L21/683 主分类号 H01L21/78
代理机构 代理人
主权项 1. A wafer processing method of dividing a wafer into a plurality of individual device chips along a plurality of crossing division lines and mounting an adhesive film for die bonding on a back side of each device chip, the plurality of crossing division lines being formed on a front side of the wafer to thereby define a plurality of separate regions where a plurality of devices are respectively formed, the wafer processing method comprising: a division groove forming step of forming a division groove having a depth corresponding to a finished thickness of each device chip along each division line on the front side of the wafer; a protective film forming step of applying a water-soluble resin to the front side of the wafer after performing the division groove forming step, thereby forming a protective film from the water-soluble resin on the front side of the wafer; a protective member attaching step of attaching a protective member to a front side of the protective film after performing the protective film forming step; a back grinding step of grinding a back side of the wafer until the division groove along each division line is exposed to the back side of the wafer after performing the protective member attaching step, thereby dividing the wafer into the individual device chips; a wafer supporting step of mounting the adhesive film on the back side of the wafer after performing the back grinding step, attaching a dicing tape to the adhesive film, supporting the peripheral portion of the dicing tape to an annular frame, and peeling the protective member attached to the front side of the wafer; an adhesive film breaking step of expanding the dicing tape to thereby break the adhesive film along the individual device chips after performing the wafer supporting step; and a protective film removing step of supplying a cleaning water to the protective film formed on the front side of the wafer after performing the adhesive film breaking step, thereby removing the protective film.
地址 Tokyo JP