| 摘要 |
The present invention relates to a thin film transistor array substrate capable of not demanding an increase in the number of masks when a light blocking layer is formed, and preventing that operation of a gate line affects a light blocking layer and a channel; and a method for manufacturing the same. According to the present invention, the thin film transistor array substrate comprises: an active layer including multiple channel regions at a distance away from each other in the center, and an impurity injecting region, excluding channel regions on a substrate; a buffer layer and a light blocking layer formed in a width corresponding to the active layer in an interlayer between the active layer and the substrate; a gate line crossing the active layer, and having a gate electrode in the region having an overlap with the channel region; a data line crossing the gate line and defining a pixel region; a first electrode integrated with the data line, whose lateral surface is connected with an impurity injecting region of one end of the active layer, and in contact with a horizontal plane of the buffer layer; and a second electrode whose lateral surface is connected with the impurity injecting region of the other end of the active layer, and connected with the light blocking layer. |
