HIGH VOLTAGE SEMICONDUCTOR APPARATUS

摘要

A vertical high voltage semiconductor apparatus includes a first conductivity semiconductor substrate; a first conductivity semiconductor layer disposed on the semiconductor substrate and having an impurity concentration lower than the semiconductor substrate; a second conductivity semiconductor layer disposed on the first conductivity semiconductor layer; a second conductivity base layer disposed on the first conductivity semiconductor layer and the second conductivity semiconductor layer and, having an impurity concentration lower than the second conductivity semiconductor layer; and a first conductivity source region selectively disposed inside the base layer. In an edge termination portion, after a region of the second conductivity semiconductor layer is removed, in the first conductivity semiconductor layer having an impurity concentration lower than that of the semiconductor substrate, second conductivity layers having a low concentration are formed such that the second conductivity layer at the innermost perimeter, the second conductivity semiconductor layer, and the base layer do not contact.