| 摘要 |
PROBLEM TO BE SOLVED: To measure the dosage of a dopant containing radicals in doping processing using a plasma.SOLUTION: A plasma processing apparatus 10 includes a processor 50 including a processing chamber, a wall probe 30, an OES 40 and a controller 20. In the processing chamber, a substrate to be processed is disposed and the dopant is injected into the substrate to be processed by the plasma of a gas containing an element to be the dopant. The wall probe 30 measures a voltage change in accordance with a density of charged particles in the plasma generated within the processing chamber. The OES 40 measures an emission intensity of the dopant in the plasma generated within the processing chamber of the processor 50. The controller 20 calculates the dosage of the dopant injected into the substrate to be processed on the basis of a result of the measurement by the wall probe 30 and a result of the measurement by the OES 40. |
