| 摘要 |
A glass composition for protecting a semiconductor junction is provided, wherein the glass composition for protecting a semiconductor junction contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO, and at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. According to the glass composition for protecting a semiconductor junction of the present invention, in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used, a semiconductor device having a high breakdown voltage can be manufactured by using a glass material containing no lead. Further, according to the glass composition for protecting a semiconductor junction, the glass composition for protecting a semiconductor junction contains at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO and hence, an average linear expansion coefficient of the glass composition at a temperature range of 50°C to 550°C becomes close to a linear expansion coefficient of silicon at a temperature range of 50°C to 550°C whereby a semiconductor device of high reliability can be manufactured. |
