发明名称 RF switch branch having improved linearity
摘要 Disclosed is a radio frequency (RF) switch branch having a reduced nonlinearity and an associated method for reducing nonlinearity in a RF switch branch. The RF switch branch includes a primary transistor, a first transistor having power terminals electrically connected between a drain node and a body node of the primary transistor, and a second transistor having power terminals electrically connected between the body node and a source node of the primary transistor. The RF switch may further include a body resistor electrically connected between the body node of the primary transistor and ground, and a gate resistor electrically connected between a gate of the primary transistor and a gate voltage source. A gate of each of the first transistor and the second transistor is electrically connected to the gate voltage source such that the first transistor and the second transistor are ON only when the primary transistor is ON.
申请公布号 US9190994(B2) 申请公布日期 2015.11.17
申请号 US201313952513 申请日期 2013.07.26
申请人 Newport Fab, LLC 发明人 Hurwitz Paul D.
分类号 H03K17/687;H01P1/10;H03K17/16 主分类号 H03K17/687
代理机构 Farjami & Farjami LLP 代理人 Farjami & Farjami LLP
主权项 1. A radio frequency (RF) switch branch having a reduced nonlinearity, said RF switch branch comprising: a primary transistor; a first transistor having power terminals electrically connected between a drain node and a body node of said primary transistor; a second transistor having power terminals electrically connected between said body node and a source node of said primary transistor; wherein one of said power terminals of said first transistor and one of said power terminals of said second transistor are coupled to ground through a body resistor of said primary transistor; wherein a ratio between a body node-to-ground impedance of said primary transistor and either a drain-to-body impedance of said primary transistor or a source-to-body impedance of said primary transistor increases without increasing said body node-to-ground impedance when said primary transistor is ON.
地址 Newport Beach CA US