| 摘要 |
<p>This is to provide a film forming method, etc., which can form a film containing a high concentration of an impurity under atmospheric pressure efficiently without using a harmful and poisonous gas. The film forming method is constituted by heating a solid source such as boron and phosphorus pentaoxide, etc., and evaporating to generate a gas, and the obtained gas is jetted to the surface(s) of a preheated substrate to form a film.</p> |
