Solid-state imaging element having image signal overflow path

摘要

Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

主权项

1. A solid state imaging device comprising:
a plurality of unit pixels, each of the unit pixels including
a photoelectric conversion element,a transfer transistor associated with the photoelectric conversion element and a charge store element,an amplifying transistor associated with the charge store element and a signal line, anda reset transistor associated with the charge store element, wherein a drain of the reset transistor is configured to receive a plurality of voltages from a selection line, and wherein the plurality of voltages includes a first voltage and a second voltage, the first voltage being selected during a first situation and the second voltage being selected during a second situation.