Three-dimensional non-volatile memory

摘要

A three-dimensional one-transistor non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a primary fin disposed on a substrate along a first direction, first and second secondary fins disposed on the substrate along a second direction, and a first gate of a first memory cell disposed on the substrate in a gate region thereof. The first gate includes a program gate, a floating gate and a control gate.

主权项

1. A memory device, comprising:
a primary fin disposed on a substrate along a first direction; first and second secondary fins disposed on the substrate along a second direction; and a first gate of a first memory cell disposed on the substrate in a gate region thereof, wherein the first gate comprises
a program gate disposed on the substrate, wherein the program gate is displaced from the primary fin by a dielectric block which is disposed on the substrate and adjacent to the primary fin, and wherein the dielectric block has a height which is less than that of the program gate,a floating gate disposed over the program gate, wherein the program gate is separated from the floating gate and the primary fin by an inter-gate dielectric, and wherein the floating gate comprises a floating gate tip disposed adjacent to the program gate and the dielectric block and between the program gate and the primary fin, anda control gate disposed adjacent to the floating gate and the program gate, wherein the control gate is separated from the substrate, the program gate, and the floating gate by the inter-gate dielectric.