发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE |
摘要 |
The electric characteristics of a semiconductor device using an oxide semiconductor are improved. The reliability of a semiconductor device using an oxide semiconductor is improved. The semiconductor device includes an element layer. The element layer includes a first film, a transistor, and a second film. The first film and the second film are partly in contact with each other. The region in which the first film and the second film are in contact with each other has a closed-loop shape when seen from above. The transistor is located between the first film and the second film. The region in which the first film and the second film are in contact with each other is located between a side surface of the element layer and the transistor. |
申请公布号 |
WO2015159179(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
WO2015IB52486 |
申请日期 |
2015.04.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA, TETSUHIRO;SAKAKURA, MASAYUKI |
分类号 |
H01L21/336;H01L21/28;H01L21/283;H01L21/768;H01L21/8238;H01L21/8242;H01L21/8247;H01L23/532;H01L27/092;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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