| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which makes it difficult for voids to generate and which can achieve high reliability when an insulator film or the like forms even using a metal electrode with little damage to a device serving as a ground in performing wiring connection.SOLUTION: The semiconductor device is formed with a metal electrode which is placed on a surface of a semiconductor element and which is used for electrical connection with the outside. A shape of the cross section perpendicular to the surface of the semiconductor element, of the metal electrode is made into such a protruding shape that the surface of the semiconductor element is made to serve as a bottom surface. |
