发明名称 Metal organic chemical vapor deposition device and temperature control method therefor
摘要 The present invention provides a metal organic chemical vapor deposition device and a temperature control method therefor. The device comprises: a chamber; a susceptor which is installed inside the chamber to allow rotation therein, wherein at least one substrate is settled thereon; a plurality of heaters which heat the susceptor, wherein the temperature is independently controlled; a gas sprayer which is positioned in the upper part of the susceptor, and sprays gases of group III and V toward the susceptor; a plurality of temperature detection sensors which are positioned in the upper part of the susceptor, and measure the temperature of heating regions heated by each heater; and a controller which retains temperature setting values necessary for the heating regions, and controls the temperature of the heating regions by comparing sensing temperature values detected by each temperature detection sensor with the setting values necessary for the heating regions. According to the present invention, the metal organic chemical vapor deposition device and the temperature control method therefor can uniformly apply necessary temperature ramping to the entire substrates during process by effectively adjusting the temperature conditions essential for every epitaxial process in the metal organic chemical vapor deposition device, which carries out the process by changing the temperature up to 1200° C. from room temperature. Therefore, the invention improves process efficiency and deposition uniformity.
申请公布号 US9165808(B2) 申请公布日期 2015.10.20
申请号 US200913503787 申请日期 2009.10.28
申请人 LIGADP CO., LTD. 发明人 Hong Sung Jae
分类号 G06F19/00;G05D5/00;G05D11/00;C23C16/00;C23C16/50;H01L21/67;G05B19/418;C23C16/46;C23C16/52;H01L21/687 主分类号 G06F19/00
代理机构 Osha • Liang LLP 代理人 Osha • Liang LLP
主权项 1. A metal organic chemical vapor deposition device, comprising: a chamber; susceptors rotatably installed within the chamber and configured to have at least one substrate seated therein; a plurality of heaters configured to heat the susceptors and to have their temperatures independently controlled; gas sprayers placed over the susceptors and configured to spray group III gas and group V gas toward the susceptors; a plurality of temperature detection sensors placed on one side of the susceptors and configured to measure temperatures of heating regions heated by the respective heaters; and a controller configured to control the temperatures of the heating regions considering detected temperature values, detected by the respective temperature detection sensors; wherein the temperature controller comprises individual controllers for controlling the respective heating regions and stores a temperature setting value for one of the heating regions as a representative temperature setting value; wherein the temperature controller controls a temperature of a representative heating region, selected from among the heating regions, based on the representative temperature setting value and controls the temperatures of the remaining heating regions other than the representative heating region based on the detected temperature value detected by a temperature detection sensor for detecting the temperature of the representative heating region, from among the temperature detection sensors; and wherein the temperature controller measures a temperature ramping tendency detected at the representative heating region and performs control so that the remaining heating regions other than the representative heating region comply with the temperature ramping tendency of the representative heating region.
地址 Gyeonggi-do KR