发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR FABRICATION THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip which is particularly stable against electrostatic discharges (so-called ESD voltage pulses).SOLUTION: An optoelectronic semiconductor chip 100 comprises a first semiconductor laminate 1 which comprises a multiplicity of micro-diodes 11, and a semiconductor laminate 2 which comprises an active region 12. In the optoelectronic semiconductor chip 100, the first semiconductor laminate 1 and the second semiconductor laminate 2 are based on nitride compound semiconductor material, the first semiconductor laminate 1 is located before the second semiconductor laminate 2 in a direction of growth, and the micro-diodes 11 form an ESD protection portion for the active region 12. |
申请公布号 |
JP2015181176(A) |
申请公布日期 |
2015.10.15 |
申请号 |
JP20150091776 |
申请日期 |
2015.04.28 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
RAINER BUTENDEICH;ALEXANDER WALTER;PETER MATIAS;TOBIAS MEYER;TAKI TETSUYA;HUBERT MAIWALD |
分类号 |
H01L33/22;C30B29/38;H01L21/205;H01L33/32 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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