发明名称 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR FABRICATION THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip which is particularly stable against electrostatic discharges (so-called ESD voltage pulses).SOLUTION: An optoelectronic semiconductor chip 100 comprises a first semiconductor laminate 1 which comprises a multiplicity of micro-diodes 11, and a semiconductor laminate 2 which comprises an active region 12. In the optoelectronic semiconductor chip 100, the first semiconductor laminate 1 and the second semiconductor laminate 2 are based on nitride compound semiconductor material, the first semiconductor laminate 1 is located before the second semiconductor laminate 2 in a direction of growth, and the micro-diodes 11 form an ESD protection portion for the active region 12.
申请公布号 JP2015181176(A) 申请公布日期 2015.10.15
申请号 JP20150091776 申请日期 2015.04.28
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 RAINER BUTENDEICH;ALEXANDER WALTER;PETER MATIAS;TOBIAS MEYER;TAKI TETSUYA;HUBERT MAIWALD
分类号 H01L33/22;C30B29/38;H01L21/205;H01L33/32 主分类号 H01L33/22
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