| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor which has small variation in characteristics, and high carrier mobility.SOLUTION: The organic thin-film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. The organic semiconductor film contains an organic semiconductor represented by general formula (1). The interfacial energy between a material used for the gate insulating film and the organic semiconductor is 2.0 mJ/mor less. The organic semiconductor film is obtained by deposition using a printing process. |
