| 摘要 |
The present invention provides a thin film forming method and a thin film forming device capable of forming an excellent thin film. The method of forming thin file comprises: a first film forming process, an anneal process, and a second film forming process. A first film forming process comprises: a step of adsorbing an organic metal composition to an object; a step of oxidation by supplying a first oxidizer to the organic metal composition adsorbed to the object. Thus, the oxidation step forming a thin film is repeated multiple times. In the anneal process, a second oxidizer having a stronger oxidizing power than the first oxidizer at the state, wherein an inside of a reaction chamber is heated to a predetermined temperature, is supplied. A second film forming process comprises: a step of adsorbing an organic metal composition to the thin film formed in the first film forming process; a step of oxidation by supplying a second oxidizer to the organic metal composition adsorbed to the thin film formed in the first film forming process. Thus, the oxidation step forming the thin film is repeated multiple times. |
