| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an element isolation layer of a semiconductor memory device, capable of filling a fluid first insulating film on the bottom surface of a trench, forming a second insulating film, then performing a dry etching process and a wet etching process and reducing the amount of fluorine (F) included in the second insulating film while expanding the top width of the trench. SOLUTION: The method of forming the element isolation layer of the semiconductor memory device includes: a stage of providing a semiconductor substrate in which trenches are formed; a stage of forming the first insulating film over the semiconductor substrate including the trenches; a stage of widening the opening width of the trench by performing a first etch process to remove a part of the first insulating film; a stage of removing impurities included in the first insulating film by performing a second etch process; and a stage of forming a second insulating film over the semiconductor substrate including the first insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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