| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device comprising a film of low dielectric constant which shows good quality even if damaged during a manufacturing process. SOLUTION: The method of manufacturing the semiconductor device includes a step (a) in which a low dielectric constant film 14 is formed on a semiconductor substrate, a step (b) in which a recess 20 is formed in the low dielectric constant film 14, a step (c) in which a step (c1) of applying an organic solution 4 to the low dielectric constant film 14 and a step (c2) of silylating the low dielectric constant film 14 using a silylating solution 5 are sequentially performed after the step (b), and a step (d) in which a metal is embedded in the recess 20 to form at least one of a via plug and metal wiring on the low dielectric constant film 14 after the step (c). By performing the step (c1) before the step (c2), permeability of the silylating solution 5 into the low dielectric constant film 14 is improved. COPYRIGHT: (C)2009,JPO&INPIT
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