| 摘要 |
In a nonvolatile semiconductor memory device, a floating gate is formed on a semiconductor substrate through a gate insulating film, and has a first portion contacting the gate insulating film and a second portion extending upwardly from a part of a surface of the first portion. A first diffusion layer is formed in the semiconductor substrate to have a plane parallel to a surface of the semiconductor substrate. A second diffusion layer is formed in the semiconductor substrate, to have the plane. A control gate is provided near the floating gate above a channel region in the semiconductor substrate and is formed on a first side of the first portion. A conductive film is connected with the first diffusion layer and is formed on a second side of the first portion and a first side of the second portion through the first insulating film.
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