| 摘要 |
<p>A method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region is disclosed. Each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region, is essentially free of metal and metal silicide. Nickel or nickel alloy deposition is followed by low-temperature annealing, nickel etching, high-temperature annealing, and aqua regla etching.</p> |
