LIGHT EMITTING DEVICE OF A NITRIDE COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF

摘要

A light emitting device of a nitride compound semiconductor and a fabrication method thereof are provided to effectively reduce the generation of the crack caused by the lattice constant of substrate by decreasing the crystallization stress between the substrate and the semiconductor layer. A prepared substrate is located inside a reaction chamber(S1). The substrate has the lattice constant which is similar to the nitride semiconductor layer formed on the substrate. The InGaN buffer layer is formed on the substrate(S2). An u-GaN(undoped-GaN) layer is formed on the InGaN buffer layer(S3). An n-type semiconductor layer, an active layer, and a p-type semiconductor layer are formed on the u-GaN layer(S4). Light emitting cells are formed by patterning the p-type semiconductor layer, the active layer, and the n-type semiconductor layer(S5). A part of n-type semiconductor layer is exposed by patterning the p-type semiconductor layer and the active layer of the light emitting cells(S6). A p-type Ohmic metal layer and an n-type Ohmic metal layer are formed on the p-type semiconductor layer and the n-type semiconductor layer(S7). A p-type pad and an n-type pad are formed on the light emitting cell(S9).