| 摘要 |
A method for fabricating a semiconductor device using a dual damascene process is provided to improve the electrical characteristic of the semiconductor device by minimizing the generation of the particles on the semiconductor substrate. A manufacturing method of a semiconductor device using a dual damascene process includes the formation step of an interlayer insulating film(218); the formation step of a contact hole(221) in the interlayer insulating film; the formation step of a hard mask(224) and a protective film(222) successively on the interlayer insulating film; the step for performing the first etching process on the interlayer insulating film; the step for performing the second etching process on the interlayer insulating film; and the step for performing the third etching process on the interlayer insulating film. The interlayer insulating film is formed on a substrate(200). The contact hole is formed in the interlayer insulating film in order to expose the substrate.
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