NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

A nonvolatile memory device is provided to reduce a standby current by supplying drop voltage to a word line for a standby period. A memory cell array(10) comprises matrices of a nonvolatile memory cell(MC), and the row of the nonvolatile memory cells is coupled with each word line(WL0~WLm) respectively. The(column) of the nonvolatile memory cells is coupled with each bit line(BL0~BLn) respectively. A column select block(20) is arranged in the either side and/or both sides of the memory cell array, and a discharge block(30) is arranged in the either side and/or both sides of the memory cell array. A row decoder(40) controls the voltage level of the word lines so that at least one of the word lines is selected between word lines. A column decoder(50) selects at least one bit line of bit lines.