发明名称 Hot substrate deposition of fused silica
摘要 Fused silica injected or created by pyrolysis of SiCl4 are introduced in a powder state into a vacuum chamber. Pluralities of jet streams of fused silica are directed towards a plurality of heated substrates. The particles attach on the substrates and form shaped bodies of fused silica called preforms. For uniformity the substrates are rotated. Dopant is be added in order to alter the index of refraction of the fused silica. Prepared soot preforms are vitrified in situ. Particles are heated, surface softened and agglomerated in mass and are collected in a heated crucible and are softened and flowed through a heated lower throat. The material is processed into quartz plates and rods for wafer processing and optical windows.
申请公布号 US7797966(B2) 申请公布日期 2010.09.21
申请号 US20010880943 申请日期 2001.06.15
申请人 SINGLE CRYSTAL TECHNOLOGIES, INC. 发明人 PANDELISEV KIRIL A.
分类号 C03B19/14;C03B17/04;C03B17/06;C03B19/01;C03B23/02;C03B23/057;C03B37/012;C03B37/014 主分类号 C03B19/14
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