Semiconductor devices having backside illuminated image sensors

摘要

A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.

主权项

1. An image sensor comprising:
a support substrate; an insulating layer on the support substrate; a semiconductor substrate including a photodiode on the insulating layer; a first conductive pattern disposed in the insulating layer; a first through electrode penetrating the support substrate to contact the first conductive pattern; a floating diffusion region adjacent to the photodiode in the semiconductor substrate; and a gate electrode disposed in the insulating layer; wherein
the floating diffusion region is separated from the photodiode, andthe gate electrode is arranged between the photodiode and the floating diffusion region.