Compositions for etching and methods of forming a semiconductor device using the same

摘要

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

主权项

1. A method of forming a semiconductor device, the method comprising:
stacking nitride layers and oxide layers on a substrate to form a stack structure; forming an opening in the stack structure; forming a semiconductor pattern in the opening; using a mask pattern to form a trench spaced apart from the semiconductor pattern to provide sidewalls exposing the nitride layers and oxide layers; and removing the nitride layers, wherein the nitride layers are removed using an etching process employing an etching composition comprising a phosphoric acid, ammonium ions or a compound comprising ammonium ions, and a silicon compound, wherein the silicon compound comprises a silicon atom, an atomic group comprising an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom.