| 摘要 |
An object of the present invention is to provide a semiconductor storage device preventing a bit line pre-charge current when switching to an operation mode while reducing a leak current. An I/O circuit (2) is connected to a bit line (BT and BB). An operation mode control circuit (3) may switch the operation mode of the I/O circuit (2). In the I/O circuit (2), a light column switch (25) is inserted between the bit line (BT and BB) and a light driver (21). A read column switch (26) is inserted between the bit line (BT and BB) and a sense amplifier (22). A pre-charge circuit pre-charges the bit line (BT and BB). In a column I/O circuit (27), the light column switch (25), the read column switch (26) and two pre-charge circuits are turned off when resuming a standby mode. In case of returning to the general operation from the standby mode resumed, the bit line (BT and BB) is pre-charged in a pre-charge circuit (24) for returning from the standby mode. |
