| 摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor device which includes a substrate formed from silicon carbide having a single crystal structure and has a low on-resistance; and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device (1) comprises semiconductor layers (21-25) and a substrate (2). The semiconductor layers (21-25) at least partially form current paths, and are formed from silicon carbide. The substrate (2) has a first face (2A) supporting the semiconductor layers (21-25), and a second face (2B) opposed to the first face (2A). In addition, the substrate (2) is formed from silicon carbide having 4H type single crystal structure. Further, the substrate (2) has a physical property such that in photoluminescence measurement, the ratio of a peak intensity at a wavelength near 500 nm to a peak intensity at a wavelength near 390 nm is 0.1 or less. Thus, the semiconductor device (1) having a low on-resistance can be obtained. |
