| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | According to one embodiment, a first frame includes a first thin plate section and a first thick plate section. A second frame includes a second thin plate section and a second thick plate section. A semiconductor chip includes a first electrode bonded to a first inner surface of the first thin plate section of the first frame, and a second electrode bonded to a second inner surface of the second thick plate section of the second frame. A resin layer seals the semiconductor chip, but leaves exposed the first outer surface of the first frame and the second outer surface of the second frame. | ||
| 申请公布号 | US9123709(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201414475438 | 申请日期 | 2014.09.02 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Tamura Koji |
| 分类号 | H01L21/00;H01L23/495;H01L23/31;H01L23/00;H01L21/56 | 主分类号 | H01L21/00 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device comprising: a first frame including a first thin plate section that has a first outer surface and a first inner surface opposite to the first outer surface, and a first thick plate section thicker than the first thin plate section; a second frame including a second thin plate section and a second thick plate section that has a second outer surface and a second inner surface opposite to the second outer surface, the second thick plate section thicker than the second thin plate section; a semiconductor chip positioned between the first thin plate section of the first frame and the second thick plate section of the second frame and such that a first portion of the second thin plate section of the second plate faces a portion of the semiconductor chip, and a second portion of the second thin plate section extends from the first portion of the second thin plate section, the semiconductor chip having a first surface electrically connected to the first inner surface of the first thin plate section of the first frame, and a second surface opposite to the first surface electrically connected to the second inner surface of the second thick plate section of the second frame; and a resin layer contacting portions of the semiconductor chip and the first inner surface of the first plate and the first portion of the second thin plate section of the second plate. | ||
| 地址 | Tokyo JP | ||