Semiconductor storage device

摘要

A semiconductor storage device 1 according to an aspect includes a first memory area 11—1 and a second memory area 11—2. Memory cells MC_m_n and bit lines BL1, BL2_, . . . . , BLm_are disposed in a boundary area 18 between the first and second memory areas 11—1 and 11—2. The memory cells MC_m_n disposed in the boundary area 18 includes memory cells into which no data is written, and a line 56 is formed in a place that overlaps memory cells disposed in the boundary area 18 when the boundary area 18 is viewed from the top. As a result, it is possible to increase the integration density of a memory cell array and provide a line in the memory cell array.

主权项

1. A semiconductor storage device comprising:
a first memory area comprising a plurality of first sense amplifiers, a plurality of first memory cells disposed on both sides of the first sense amplifiers, and a plurality of first bit line pairs connected to the first memory cells, the first bit line pairs being connected to the first sense amplifiers respectively on both sides of the first sense amplifiers; and a second memory area comprising a plurality of second sense amplifiers, a plurality of second memory cells disposed on both sides of the second sense amplifiers, and a plurality of second bit line pairs connected to the second memory cells, the second bit line pairs being connected to the second sense amplifiers respectively on both sides of the second sense amplifiers, wherein in a boundary area between the first and second memory areas, the first memory cells and the first bit lines disposed on a second memory area side of the first sense amplifiers, and the second memory cells and the second bit lines disposed on a first memory area side of the second sense amplifiers are disposed, and the first and second memory cells disposed in the boundary area include a memory cell into which no data is written, and a first line is formed in a place overlapping the first and second memory cells disposed in the boundary area when the boundary area is viewed from top.