发明名称 |
METHOD OF MANUFACTURING STACKED NANOWIRE MOS TRANSISTOR |
摘要 |
Methods of manufacturing stacked nanowires MOS transistors are disclosed. In one aspect, the method includes forming a plurality of fins along a first direction on a substrate. The method also includes forming stack of nanowires constituted of a plurality of nanowires in each of the fins. The method also includes forming a gate stack along a second direction in the stack of nanowires, the gate stack surrounding the stack of nanowires. The method also includes forming source/drain regions at both sides of the gate stack, the nanowires between the respective source/drain regions constituting a channel region. A stack of nanowires may be formed by a plurality of etching back, laterally etching a trench and filling the trench. The laterally etching process includes isotropic dry etching having an internally tangent and lateral etching, and a wet etching which selectively etches along respective crystallographic directions. |
申请公布号 |
US2015228480(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201514688788 |
申请日期 |
2015.04.16 |
申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Yin Huaxiang;Qin Changliang;Fu Zuozhen;Ma Xiaolong;Chen Dapeng |
分类号 |
H01L21/02;H01L21/8234 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing stacked nanowires MOS transistors, the method comprising:
forming a plurality of fins along a first direction on a substrate; forming a stack of nanowires constituted of a plurality of nanowires in each of the fins; forming a gate stack along a second direction in the stack of nanowires, the gate stack surrounding the stack of nanowires; and forming source/drain regions at both sides of the gate stack, the nanowires between the respective source/drain regions constituting a channel region. |
地址 |
Beijing CN |