SUPERJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor device that includes the following is manufactured: an n− base layer; a p-type base layer formed on the surface of the n− base layer; an n+ source layer formed in the inner area of the p-type base layer; a gate electrode formed so as to face a channel region across a gate insulating film; a plurality of p-type columnar regions that are formed in the n− base layer so as to continue from the p-type base layer and that are arranged at a first pitch; and a plurality of p+ collector layers that are selectively formed on the rear surface of the n− base layer and that are arranged at a second pitch larger than the first pitch.

主权项

1. A semiconductor device, comprising:
a first conductive type base layer; a plurality of second conductive type base layers selectively formed on a surface of the first conductive type base layer; a first conductive type source layer that is formed in an inner area of the respective second conductive type base layers at a gap from a periphery of the respective second conductive type base layers, the first conductive type source layer forming a channel region with said periphery; a gate electrode formed so as to face the channel region across a gate insulating film; a plurality of second conductive type columnar regions that are formed in the first conductive type base layer so as to continue from the respective second conductive type base layers and that are arranged at a prescribed first pitch with respect to the second conductive type base layers that are adjacent to each other; and a plurality of second conductive type collector layers that are selectively formed on a rear surface of the first conductive type base layer and that are arranged at a prescribed second pitch, the second pitch being larger than the first pitch of the second conductive type columnar regions.