Mask processing using films with spatially selective birefringence reduction

摘要

Certain patternable reflective films are used as masks to make other patterned articles, and one or more initial masks can be used to pattern the patternable reflective films. An exemplary patternable reflective film has an absorption characteristic suitable to, upon exposure to a radiant beam, absorptively heat a portion of the film by an amount sufficient to change a first reflective characteristic to a different second reflective characteristic. The change from the first to the second reflective characteristic is attributable to a change in birefringence of one or more layers or materials of the patternable film. In a related article, a mask is attached to such a patternable reflective film. The mask may have opaque portions and light-transmissive portions. Further, the mask may have light-transmissive portions with structures such as focusing elements and/or prismatic elements.

主权项

1. A method of making a patterned film, comprising:
providing a first film having a first reflective characteristic, the first film also having a first absorption characteristic suitable to, upon exposure to a first radiant beam, absorptively heat a portion of the first film by an amount sufficient to change the first reflective characteristic to a second reflective characteristic by a change in birefringence, and the first film comprising a first group of layers arranged to selectively reflect light by constructive or destructive interference to provide the first reflective characteristic; providing a second film having a first detectable characteristic that changes to a different second detectable characteristic upon exposure to a second radiant beam, and the second film comprising a second group of layers; directing the first radiant beam preferentially at a second zone rather than a first zone of the first film to change the first reflective characteristic to the second reflective characteristic in the second zone by a change in birefringence so as to convert the first film to a patterned mask; and placing the first film in proximity to the second film, using the patterned mask to pattern the second radiant beam, and directing the patterned second radiant beam at the second film to change the first detectable characteristic to the second detectable characteristic at selected portions of the second film, wherein the change from the first reflective characteristic to the second reflective characteristic is substantially attributable to a change in birefringence of at least some of the first group of layers of the first film.