发明名称 THIN-FILM SEMINCONDUCTOR ELECTRODE COMPRISING STABILIZING LAYER AND METHOD FOR PREPARING THE SAME
摘要 <p>The present invention relates to a thin film semiconductor electrode which includes a stabilizing layer on the surface thereof. The stabilizing layer includes a matrix made of polysiloxane compounds and a metal porphyrin complex embedded in the matrix. The present invention provides the thin film semiconductor electrode, a manufacturing method thereof, and a photo-electro chemical device including the semiconductor electrode. The present invention improves the photoelectric conversion efficiency of the electrode by obtaining high stability under the photo-electro chemical condition in which the thin film semiconductor electrode is in contact with an electrolyte solution by forming the stabilizing layer which includes the matrix made of polysiloxane compounds and the metal porphyrin complex embedded in the matrix on the surface of the thin film semiconductor electrode.</p>
申请公布号 KR20150087858(A) 申请公布日期 2015.07.31
申请号 KR20120036663 申请日期 2012.04.09
申请人 DAN SUK INDUSTRIAL CO., LTD. 发明人 PARK, DAE HOON;HIKMAT SAID HASAN HILAL;SUBHI SALIH;AHED ZYOUD;HUDA SABRI;IYAD SAADEDDIN;GUY CAMPET
分类号 H01L31/042;H01L31/0224;H01L31/18 主分类号 H01L31/042
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