Monolithic IGBT and diode structure for quai-resonant converters

摘要

This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally opposite from the peripheral terminal disposed on an active area of the semiconductor power device. In an embodiment of this invention, the semiconductor power device is an insulated gate bipolar transistor (IGBT).

主权项

1. A package assembly for a vertical semiconductor device therein wherein:
said vertical semiconductor device is formed in a semiconductor substrate having a peripheral terminal of a lateral diode in a termination area of the vertical semiconductor device and a central terminal of the diode laterally opposite from the peripheral terminal, the central terminal being disposed on an active area of the vertical semiconductor device; and a leadframe having conductive interconnections connected to said peripheral and central terminals of said lateral diode and said vertical semiconductor device.