| 发明名称 |
TUNABLE SOI LASER |
| 摘要 |
A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium. |
| 申请公布号 |
US2015207296(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201514601101 |
申请日期 |
2015.01.20 |
| 申请人 |
ROCKLEY PHOTONICS LIMITED |
发明人 |
Rickman Andrew;Zilkie Aaron John |
| 分类号 |
H01S5/125;H01S5/32;H01S5/30;H01S5/34;H01S5/10;H01S5/02 |
主分类号 |
H01S5/125 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A wavelength tunable silicon-on-insulator (SOI) laser comprising:
a laser cavity including:
a semiconductor gain medium having a front end and a back end; anda phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium. |
| 地址 |
Marlborough Wiltshire GB |
