发明名称 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
摘要 A chemically amplified positive-type photoresist composition for a thick film capable of forming a thick film resist pattern having superior resolving ability and controllability of dimensions, and being favorable in rectangularity, as well as a method for producing a thick film resist pattern using such a composition. The photoresist composition comprises an acid generator including a cationic moiety and an anionic moiety, and a resin whose alkali solubility increases by the action of an acid.
申请公布号 JP5749631(B2) 申请公布日期 2015.07.15
申请号 JP20110245494 申请日期 2011.11.09
申请人 東京応化工業株式会社 发明人 清水 貴弘;鷲尾 泰史;安藤 友之;越山 淳
分类号 G03F7/004;G03F7/039;H05K3/00;H05K3/18 主分类号 G03F7/004
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